North America SiC power semiconductor market is projected to register a CAGR of 19.1% in the forecast period of 2020 to 2027. The new market report contains data for historic year 2018, the base year of calculation is 2019 and the forecast period is 2020 to 2027.
Market Segmentation:
North America SiC Power Semicondutor Market By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), SiC Bare Die, Pin Diode, Junction FET (JFET), Bipolar Junction Transistor (BJT) and Others), Voltage Range (Less than 300V, 301-900V, 901-1700V, 1701V and Above), Application (Power Supplies, Electric Vehicles (EV), EV Charging Infrastructure, Industrial Motor Drives, Inverters, RF Devices and Others), Wafer Size (2 Inch, 4 Inch, 6 Inch and Above), Wafer Type (Blank SiC wafers and SiC Epitaxial Wafers), Vertical (Industrial, Commercial, Automotive, Consumer Electronics, Utilities & Energy, Aerospace & Defense, Medical, IT And Telecommunications and Others), Country (U.S., Canada and Mexico) Industry Trends and Forecast to 2027
Some of the major factors contributing to the growth of the North America SiC power semiconductor market are:
• Increasing adoption of the electric vehicles as well as hybrid vehicles having SiC power devices is driving the market growth.
• Increasing penetration of SiC wafers in the power supplies to offer better performance.
Market Players
Some of the major players operating in the SiC power semiconductor market are:
• Cree, Inc.
• Infineon Technologies AG
• Microsemi
• Mitsubishi Electric Corporation
• Toshiba Corporation
• Texas Instruments Incorporated
• NXP Semiconductors
• Semiconductor Components Industries, LLC
• STMicroelectronics
• Renesas Electronics Corporation
• Fuji Electric Co., Ltd.
• ROHM CO., LTD.
• GE
• Global Power Technologies Group
• Littelfuse, Inc.
• UnitedSiC
• SEMIKRON
• Hitachi Power Semiconductor Device
• GeneSiC Semiconductor Inc.